| 198 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
Capacitance-Voltage Characterization of Ultra-Thin Floating-Body MOSFETs |
The 24th Korean Conference on Semiconductors (KCS) |
34 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 197 |
Junsoo Lee and Seongjae Cho |
Optimal Design of Si Dual-Gate Junctionless Tunneling Field-Effect Transistor |
The 24th Korean Conference on Semiconductors (KCS) |
33 |
Hongcheon, Korea |
Feb. 13-15, 2017 |
| 196 |
Seunghyun Kim, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, Byung-Gook Park |
Circuit-level macro modeling of charge-trap flash memory array |
2017 International Conference on Electronics, Information, and Communication (ICEIC) |
99-101 |
Phuket, Thailand |
Jan. 11-14, 2017 |
| 195 |
Youngmin Kim, Yongbeom Cho, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park |
Scaling and Sub-1-V Low-Voltage Operation Characteristics of TRAM Memory Device Based on 2-Terminal Thyristor |
2016 IEIE Fall Conference |
62-65 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 194 |
Yongbeom Cho, Youngmin Kim, Seongjae Cho, Sang Sig Kim, and Byung-Gook Park |
Optimization of Program Operation for the Scaled 2-Terminal TRAM Memory Device |
2016 IEIE Fall Conference |
106-109 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 193 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
Non-Quasi-Static Capacitance-Voltage Characteristics of Ultra-Thin-Body n-type MOSFET Device |
2016 IEIE Fall Conference |
129-132 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 192 |
Yung Hun Jung, Yongbeom Cho, and Seongjae Cho |
Characterization of Ge1-xSnx by first-principle simulation based on modified Becke-Johnson exchange potential for device applications |
2016 IEIE Fall Conference |
133-136 |
Daegu, Korea |
Nov. 25-26, 2016 |
| 191 |
Seongjae Cho |
[Invited] Advanced Group-IV Materials and Devices for Next-Generation Integrated System |
2016 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) |
1-1-0588 |
Jeju, Korea |
Nov. 6-9, 2016 |
| 190 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Taehyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Si3N4-Based RRAM with Flexibility of Physical Design |
The 29th International Microprocesses and Nanotechnology Conference (MNC) |
10P-7-106L |
Kyoto, Japan |
Nov. 8-11, 2016 |
| 189 |
Junsoo Lee, Yongbeom Cho, and Seongjae Cho |
Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation |
2016 International Conference on Solid State Devices and Materials (SSDM) |
PS-3-01 |
Tsukuba, Japan |
Sep. 26-29, 2016 |
| 188 |
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Min Ju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park |
Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices |
20th International Vacuum Congress |
459 |
Busan, Korea |
Aug. 21-26, 2016 |
| 187 |
Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Electrical Performance of InN/GaN-based Tunneling Field-effect Transistor with Subthrethold Swing below 60 mV/decade |
The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) |
P1068_0098 |
KINTEX, Korea |
Jul. 13-15, 2016 |
| 186 |
Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Design and Analysis of Logic Inverter Using Antimony-based Compound Semiconductor Junctionless Transistor |
The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) |
P1601_0277 |
KINTEX, Korea |
Jul. 13-15, 2016 |
| 185 |
Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Seongjae Cho, and In Man Kang |
Effect of electric fringe-field on low-power and radio-frequency performance of sub-10 nm junctionless transistors with hetero-dieletric spacer structure |
The 14th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2016) |
P1601-0097 |
KINTEX, Korea |
Jul. 13-15, 2016 |
| 184 |
Seunghyun Kim, Myung-Hyun Baek, Dae Woong Kwon, Do-Bin Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park |
Characterization of the vertical position of the trapped charge in charge-trap flash memory |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
473-476 |
Hakodate, Japan |
Jul. 4-6, 2016 |
| 183 |
Yongbeom Cho, Junsoo Lee, and Seongjae Cho |
Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
458-463 |
Hakodate, Japan |
Jul. 4-6, 2016 |
| 182 |
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Seongjae Cho, and Byung-Gook Park |
SiN-Based Resistive Random-Access Memory Inserting Tunnel Barrier |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
399-400 |
Hakodate, Japan |
Jul. 4-6, 2016 |
| 181 |
Junsoo Lee, Yongbeom Cho, Youngmin Kim, and Seongjae Cho |
Design and Characterization of GeSn Junctionless Tunneling FinFET |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
326-329 |
Hakodate, Japan |
Jul. 4-6, 2016 |
| 180 |
Eunseon Yu and Seongjae Cho |
Simulaton of nanowire p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) having SiGe channel on Si core at different Ge fractions |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
189-192 |
Hakodate, Japan |
Jul. 4-6, 2016 |
| 179 |
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Su Hyun Bang, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Self-compliance bipolar resistive switching in Ni/Ti/SiOx/Si structure |
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
163-164 |
Hakodate, Japan |
Jul. 4-6, 2016 |
Ewha Womans University