| 195 |
Yi Ju Lee and Seongjae Cho |
Predominance of Carrier Diffusion in Determination of Data Retention in One-Transistor Dynamic Random-Access Memory |
Journal of Semiconductor Technology and Science |
21 |
6 |
406-411 |
Dec. 2021 |
| 194 |
Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach |
Physical Chemistry Chemical Physics |
23 |
48 |
27234–27243 |
Dec. 2021 |
| 193 |
Md. Hasan Raza Ansari, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application |
IEEE Journal of the Electron Devices Society |
9 |
|
1282-1289 |
Dec. 2021 |
| 192 |
Umbreen Rasheed, Hojeong Ryu, Chandreswar Mahata, Rana M. Arif Khalil, Muhammad Imran, Anwar Manzoor Rana, Farhana Kousar, Boram Kim, Yoon Kim, Seongjae Cho, Fayyaz Hussain, and Sungjun Kim |
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications |
Journal of Alloys and Compounds |
877 |
|
160204-1-160204-10 |
Oct. 2021 |
| 191 |
Quan The Nguyen, Deokjin Jang, Md. Hasan Raza Ansari, Garam Kim, Seongjae Cho, and Il Hwan Cho |
Reliability improvement of 1T DRAM based on feedback transistor by using local partial insulators |
Japanese Journal of Applied Physics |
60 |
10 |
104002-1-104002-7 |
Oct. 2021 |
| 190 |
Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Md. Hasan Raza Ansari, Seongjae Cho, and Byung-Gook Park |
A More Hardware-Oriented Spiking Neural Network Based on Leading Memory Technology and Its Application With Reinforcement Learning |
IEEE Transactions on Electron Devices |
68 |
9 |
4411-4417 |
Sep. 2021 |
| 189 |
Songyi Yoo, In-Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory |
Journal of Nanoscience and Nanotechnology |
21 |
8 |
4216-4222 |
Aug. 2021 |
| 188 |
Md. Hasan Raza Ansari, Udaya Mohanan Kannan, and Seongjae Cho |
Core-Shell Dual-Gate Nanowire Charge-Trap Memory for Synaptic Operations for Neuromorphic Applications |
Nanomaterials |
11 |
7 |
1773-1-1773-14 |
Jul. 2021 |
| 187 |
Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee, and Sangjoon Park |
Process steps for high quality Si-based epitaxial growth at low temperature via RPCVD |
Materials |
14 |
13 |
3733-1-3733-11 |
Jul. 2021 |
| 186 |
Tanzia Chowdhury, Romel Hidayat, Hye-Lee Kim, Tirta Rona Mayangsari, Seongjae Cho, Sangjoon Park, Jongwan Jung, and Won-Jun Lee |
Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules |
Applied Surface Science |
554 |
|
149481-1-149481-9 |
Jul. 2021 |
| 185 |
Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Nanoscale wedge resistive-switching synaptic device and experimental verification of vector-matrix multiplication for hardware neuromorphic application |
Japanese Journal of Applied Physics |
60 |
5 |
050905-1-050905-5 |
May 2021 |
| 184 |
Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, and Daehwan Kim |
Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System |
IEEE Access |
9 |
|
59345-59352 |
Apr. 2021 |
| 183 |
Md. Hasan Raza Ansari and Seongjae Cho |
Performance Improvement of 1T DRAM by Raised Source and Drain Engineering |
IEEE Transactions on Electron Devices |
68 |
4 |
1577-1584 |
Apr. 2021 |
| 182 |
Hocheon Yoo, Keun Heo, Md. Hasan Raza Ansari, and Seongjae Cho |
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications |
Nanomaterials |
11 |
4 |
832-1-832-21 |
Mar. 2021 |
| 181 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park |
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nano-Wedge RRAM through Nickel Silicidation |
IEEE Transactions on Electron Devices |
68 |
1 |
438-442 |
Jan. 2021 |
| 180 |
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation modelled by Monte Carlo Simulation |
IEEE Access |
8 |
|
228720-228730 |
Dec. 2020 |
| 179 |
Md. Hasan Raza Ansari, Seongjae Cho, and Byung-Gook Park |
More physical understanding of current characteristics of tunneling field-effect transistor leveraged by gate positions and properties through dual-gate and gate-all-around structuring |
Applied Physics A |
126 |
11 |
839-1-839-8 |
Oct. 2020 |
| 178 |
Eunjung Ko, Seon Haeng Lee, Md. Hasan Raza Ansari, Seung Wook Ryu, and Seongjae Cho |
Dependency of electrical performances and reliability of 28-nm logic transistor on gate oxide interface treatment methods |
Applied Physics Express |
13 |
10 |
101003-1-101003-3 |
Sep. 2020 |
| 177 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application |
Electronics |
9 |
8 |
1228-1-1228-8 |
Aug. 2020 |
| 176 |
Donguk Kim, Jun Tae Jang, Eunseon Yu, Jungyu Park, Jungi Min, Dong Myong Kim, Sung-Jin Choi, Hyun-Sun Mo, Seongjae Cho, Kaushik Roy, and Dae Hwan Kim |
Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency |
ACS Applied Electronic Materials |
2 |
8 |
2390-2397 |
Aug. 2020 |
Ewha Womans University