| 177 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application |
Electronics |
9 |
8 |
1228-1-1228-8 |
Aug. 2020 |
| 176 |
Donguk Kim, Jun Tae Jang, Eunseon Yu, Jungyu Park, Jungi Min, Dong Myong Kim, Sung-Jin Choi, Hyun-Sun Mo, Seongjae Cho, Kaushik Roy, and Dae Hwan Kim |
Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency |
ACS Applied Electronic Materials |
2 |
8 |
2390-2397 |
Aug. 2020 |
| 175 |
Seongjae Cho, Stanley S. Cheung, Yung Hun Jung, Sae-Kyoung Kang, Dal Ho Lee, and Byung-Gook Park |
Ge-on-Si Photodetector with Enhanced Optical Responsivity by Advanced Metallization Geometry |
Journal of Semiconductor Technology and Science |
20 |
4 |
366-371 |
Aug. 2020 |
| 174 |
Eunseon Yu, Seongjae Cho, Kaushik Roy, and Byung-Gook Park |
A Quantum-Well Charge-Trap Synaptic Transistor with Highly Linear Weight Tunability |
IEEE Journal of the Electron Devices Society |
8 |
|
834-840 |
Aug. 2020 |
| 173 |
Hyojong Cho, Ji-Ho Ryu, Chandreswar Mahata, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Seongjae Cho, Alexey Mikhaylov, Jack Lee, Sungjun Kim |
Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures |
Journal of Physics D: Applied Physics |
53 |
43 |
435102-1-435102-6 |
Aug. 2020 |
| 172 |
Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, and Sungjun Kim |
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering |
IEEE Access |
8 |
|
130678-130686 |
Jul. 2020 |
| 171 |
Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application |
IEEE Transactions on Nanotechnology |
19 |
|
475-480 |
Jul. 2020 |
| 170 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application |
Semiconductor Science and Technology |
35 |
5 |
055002-1-055002-10 |
May 2020 |
| 169 |
Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM |
IEEE Transactions on Electron Devices |
67 |
4 |
1600-1605 |
Apr. 2020 |
| 168 |
Md. Hasan Raza Ansari, Nupur Navlakha, Jae Yoon Lee, and Seongjae Cho |
Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement |
IEEE Transactions on Electron Devices |
67 |
4 |
1471-1479 |
Apr. 2020 |
| 167 |
Jun Tae Jang, Jungi Min, Donguk Kim, Jingyu Park, Sung-Jin Choi, Dong Myong Kim, Seongjae Cho, and Dae Hwan Kim |
A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence |
Solid-State Electronics |
166 |
|
107764-1-107764-7 |
Apr. 2020 |
| 166 |
Dong Chang Han, Deok Jin Jang, Jae Yoon Lee, Seongjae Cho, and Il Hwan Cho |
Investigation of Modified 1T DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics |
Journal of Semiconductor Technology and Science |
20 |
2 |
145-150 |
Apr. 2020 |
| 165 |
Yongjin Jeong, In Man Kang, Seongjae Cho, Jisun Park, and Hyungsoon Shin |
Charge Based Current-Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor |
Journal of Nanoscience and Nanotechnology |
20 |
2 |
4920-4925 |
Feb. 2020 |
| 164 |
Hyeonjeong Kim, Songyi Yoo, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM |
Micromachines |
11 |
2 |
228-1-228-8 |
Feb. 2020 |
| 163 |
Seoyeon Go, Won Jae Lee, and Seongjae Cho |
A More Accurate Analytical DC Compact Modeling of Tunneling Field-Effect Transistor for SPICE Simulation |
Journal of Semiconductor Technology and Science |
19 |
6 |
551-560 |
Dec. 2019 |
| 162 |
Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime |
Wiley ETRI Journal |
41 |
6 |
829-837 |
Dec. 2019 |
| 161 |
Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung, and Geun Young Yeom |
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction |
Nature Communications |
10 |
|
4701-1-4701-10 |
Oct. 2019 |
| 160 |
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee |
Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs |
Journal of Nanoscience and Nanotechnology |
19 |
10 |
6070-6076 |
Oct. 2019 |
| 159 |
Hyeonjeong Kim, In Man Kang, Seongjae Cho, Wookyung Sun, and Hyungsoon Shin |
Analysis of operation characteristics of junctionless poly-Si 1T DRAM in accumulation mode |
Semiconductor Science and Technology |
34 |
10 |
15007-1-15007-8 |
Oct. 2019 |
| 158 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems |
Electronics |
8 |
10 |
1102-1-1102-12 |
Sep. 2019 |
Ewha Womans University