| 298 |
Arati Kumari Shah, Seung Hyun Kim, and Seongjae Cho |
Integrate-and-Fire Neuron Circuit Simulation with 180-nm Technology for Si CMOS Spiking Neural Network |
The 29th Korean Conference on Semiconductors (KCS) |
737 |
Gangwon-do, Korea |
Jan. 24-26, 2022 |
| 297 |
Sibeom Kim, Young Jun Yoon, and Seongjae Cho |
Effects of Irradiation of High-Energy Hydrogen Ions on the Characteristics of Poly-Si Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistor |
The 29th Korean Conference on Semiconductors (KCS) |
395 |
Gangwon-do, Korea |
Jan. 24-26, 2022 |
| 296 |
Inyoung Lee, Kyung Song, Seungmin Lee, Il Hwan Cho, and Seongjae Cho |
Highly Reliable Electrical Extraction of Density of Grain Boundary States from the Ultrathin Poly-Si MOSFET Channel |
The 29th Korean Conference on Semiconductors (KCS) |
126 |
Gangwon-do, Korea |
Jan. 24-26, 2022 |
| 295 |
Md. Hasan Raza Ansari, Kannan U. M., and Seongjae Cho |
Gate-All-Around (GAA) Synaptic Transistor with Linear Weight Adjustability for Neuromorphic Computing Architecture |
2021 International Conference on Solid State Devices and Materials (SSDM) |
684-685 |
Virtual |
Sep. 6-9, 2021 |
| 294 |
Yi Ju Lee, Seungjo Baek, and Seongjae Cho |
Assessment of Data Retainability in Capacitorless Dynamic Random-Access Memory by Time- and Position-Dependent Hole Diffusion Function |
2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
B1-6 |
Sendai, Japan (Virtual) |
Aug. 26-27, 2021 |
| 293 |
Inyoung Lee, Seongjae Cho, and Il Hwan Cho |
Investigation of poly-silicon channel variation in vertical 3D NAND flash memory |
2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
P-2 |
Sendai, Japan (Virtual) |
Aug. 26-27, 2021 |
| 292 |
Seongjae Cho |
[Invited] Volatile and Nonvolatile Memory Device Technologies for Processing-in-Memory |
2021 IEEE Region 10 Symposium (TENSYMP) |
20 |
Jeju, Korea |
Aug. 23-25, 2021 |
| 291 |
Seungjo Baek, Byeong Eun Yoo, Iju Lee, and Seongjae Cho |
Design of Compact 2T(0C) DRAM Cell Allowing Nondestructive Read Operation and Glance at Its Applications as Synaptic Device |
2021 IEIE Summer Conference |
515-516 |
Jeju, Korea |
Jun. 30 - Jul. 2, 2021 |
| 290 |
Jin So, Seongjae Cho, Il Hwan Cho, and Garam Kim |
Design of 1T DRAM Device with a Hole Storage Region and Analysis on Its Sensing Margin |
2021 IEIE Summer Conference |
405-406 |
Jeju, Korea |
Jun. 30 - Jul. 2, 2021 |
| 289 |
Won-Hyeong Joo, Seongjae Cho, Il Hwan Cho, and Garam Kim |
Analysis on Improvement in Performance of 1T DRAM Device with a Partial SiGe Layer in the Floating Body |
2021 IEIE Summer Conference |
403-404 |
Jeju, Korea |
Jun. 30 - Jul. 2, 2021 |
| 288 |
Byeong Eun Yoo, Iju Lee, Seungjo Baek, and Seongjae Cho |
Fabrication and Operation of the Vertical Heterojunction Shockley Diode for Application as Synaptic Device with Multiple-Weight Tunability and Short-Term Plasticity |
2021 IEIE Summer Conference |
172-173 |
Jeju, Korea |
Jun. 30 - Jul. 2, 2021 |
| 287 |
Md. Hasan Raza Ansari, Daehwan Kim, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Core-Shell Dual-Gate Nanowire Synaptic Transistor with Short/Long-Term Plasticity |
5th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021 |
WTHPE-071 |
Chengdu, China |
Apr. 8-11, 2021 |
| 286 |
Daehwan Kim, Jae Hoon Park, Chang Kyun Kim, and Seongjae Cho |
Effects of High-Energy Electron Injection on MOSFET Reliability |
The 28th Korean Conference on Semiconductors (KCS) |
230 |
Virtual |
Jan. 25-29, 2021 |
| 285 |
Md. Hasan Raza Ansari, Daehwan Kim, and Seongjae Cho |
Design and Characterization of Complementary Tunneling Field-Effect Transistors Integrated in a Single Device |
The 28th Korean Conference on Semiconductors (KCS) |
209 |
Virtual |
Jan. 25-29, 2021 |
| 284 |
Daehwan Kim, Hyojong Cho, Junhyeok Choi, Hyeonpyo Lee, Changhun Kim, Won-Jun Lee, Jongwan Jung, Sungjun Kim, and Seongjae Cho |
Vertical Si/SiGe Heterojunction 2-Terminal Thyristor Dynamic Random-Access Memory Demonstrating Gradual Switching Characteristics |
2020 IEIE Fall Conference |
106-107 |
Gwangju, Korea |
Nov. 27-28, 2020 |
| 283 |
Hyojong Cho, Daehwan Kim, Junhyeok Choi, Jae Yoon Lee, Hyeonpyo Lee, Changhun Kim, Sungjun Kim, and Seongjae Cho |
Self-Aligned Etching Technique for Vertical Double-Step Structure and Its Application in the Fabrication of Cross-Bar Array |
2020 IEIE Summer Conference |
556-558 |
Jeju, Korea |
Aug. 19-21, 2020 |
| 282 |
Daehwan Kim, Junhyeok Choi, Sungjun Kim, Hyungjin Kim, and Seongjae Cho |
Characterization of TiOx ReRAM and Development of Its DC Compact Model |
2020 IEIE Summer Conference |
80-82 |
Jeju, Korea |
Aug. 19-21, 2020 |
| 281 |
Hyeonpyo Lee and Seongjae Cho |
Design of a Heterojunction Tunneling Field-Effect Transistor for Gate-Drain-Tied 2-Terminal Operation |
2020 IEIE Summer Conference |
74-76 |
Jeju, Korea |
Aug. 19-21, 2020 |
| 280 |
Md. Hasan Raza Ansari and Seongjae Cho |
A Novel 1T DRAM with Shell/Core Dual-Gate Architecture |
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) |
90-91 |
Hsinchu, Taiwan |
Aug. 10-13, 2020 |
| 279 |
Md. Hasan Raza Ansari, Jae Yoon Lee, Seongjae Cho, and Byung-Gook Park |
Design and Analysis of Core-Gate Shell-Channel 1T DRAM |
2020 Silicon Nanoelectronic Workshop (SNW) |
|
Honolulu, USA |
Jun. 13-14, 2020 |
Ewha Womans University