| 130 |
Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. |
First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications |
Journal of Semiconductor Technology and Science |
17 |
5 |
675-684 |
Oct. 2017 |
| 129 |
Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park |
Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
5 |
584-590 |
Oct. 2017 |
| 128 |
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes |
Journal of Nanoscience and Nanotechnology |
17 |
10 |
7160-7163 |
Oct. 2017 |
| 127 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures |
Physica B: Condensed Matter |
521 |
|
305-311 |
Sep. 2017 |
| 126 |
Yongbeom Cho, Eunseon Yu, and Seongjae Cho |
Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits |
IDEC Journal of Integrated Circuits and Systems |
3 |
3 |
13-19 |
Jul. 2017 |
| 125 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory |
Solid-State Electronics |
132 |
|
109-114 |
Jun. 2017 |
| 124 |
Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park |
Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
2 |
167-172 |
Apr. 2017 |
| 123 |
Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho |
Nonvolatile Memory Materials/Devices Technologies |
Bulletin of the Korean Institute of Electrical and Electronic Material Engineers |
30 |
3 |
31-43 |
Mar. 2017 |
| 122 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Nano-cone resistive memory for ultralow power operation |
Nanotechnology |
28 |
12 |
125207-1-125207-7 |
Mar. 2017 |
| 121 |
Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park |
InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation |
Optics Express |
25 |
6 |
6440-6449 |
Mar. 2017 |
| 120 |
Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho, and Byung-Gook Park |
Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory |
Japanese Journal of Applied Physics |
56 |
1 |
014302-1-014302-5 |
Jan. 2017 |
| 119 |
Junsoo Lee, Youngmin Kim, and Seongjae Cho |
Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes |
IEEE Transactions on Electron Devices |
63 |
12 |
4610-4616 |
Dec. 2016 |
| 118 |
Youngmin Kim, Junsoo Lee, and Seongjae Cho |
Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-Effect Transistor |
Journal of Semiconductor Technology and Science |
16 |
6 |
847-853 |
Dec. 2016 |
| 117 |
Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park |
Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy |
Journal of Semiconductor Technology and Science |
16 |
6 |
854-859 |
Dec. 2016 |
| 116 |
Eunseon Yu and Seongjae Cho |
Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel |
Japanese Journal of Applied Physics |
55 |
11 |
114001-1-114001-8 |
Nov. 2016 |
| 115 |
Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Seongjae Cho, and Byung-Gook Park |
Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure |
Journal of Alloys and Compounds |
686 |
|
479-483 |
Nov. 2016 |
| 114 |
Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang |
Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET) |
Journal of Nanoscience and Nanotechnology |
16 |
10 |
10199-10203 |
Oct. 2016 |
| 113 |
Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications |
Journal of Nanoscience and Nanotechnology |
16 |
10 |
10247-10251 |
Oct. 2016 |
| 112 |
Hyungjin Kim, Seongjae Cho, Min-Chul Sun, Jungjin Park, Sungmin Hwang, and Byung-Gook Park |
Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity |
Journal of Semiconductor Technology and Science |
16 |
5 |
657-663 |
Oct. 2016 |
| 111 |
Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jung Hoon Lee, Jang-Gn Yun, Seongjae Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park |
Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells |
Nanoscience and Nanotechnology Letters |
8 |
7 |
577-580 |
Jul. 2016 |
Ewha Womans University