| 135 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
SiGe Heterojunction FinFET Towards Tera-Hertz Applications |
Journal of the Korean Physical Society |
72 |
4 |
527-532 |
Feb. 2018 |
| 134 |
Yunghun Jung, Yongbeom Cho, In Man Kang, and Seongjae Cho |
Analyses on Device Performances and Short-Channel Effects of Tunneling Field-Effect Transistor Having SiGe Source Junction |
Journal of The Institute of Electronics and Information Engineers |
54 |
12 |
33-41 |
Dec. 2017 |
| 133 |
Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang |
Electrical Performances of InN/GaN Tunneling Field-Effect Transistor |
Journal of Nanoscience and Nanotechnology |
17 |
11 |
8355-8359 |
Nov. 2017 |
| 132 |
Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho, and In Man Kang |
Electrical Characteristics of Tunneling Field-Effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs |
Journal of Electrical Engineering and Technology |
12 |
6 |
2324-2332 |
Nov. 2017 |
| 131 |
Eunseon Yu, Seung Wook Ryu, Henry H. Radamson, and Seongjae Cho |
Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications |
Journal of Nanoelectronics and Optoelectronics |
12 |
10 |
1129-1133 |
Oct. 2017 |
| 130 |
Yongbeom Cho, Seongjae Cho, Byung-Gook Park, and James S. Harris, Jr. |
First-principle Study for More Accurate Optical and Electrical Characterization of Ge1-xSnx Alloy for Si and Group-IV Device Applications |
Journal of Semiconductor Technology and Science |
17 |
5 |
675-684 |
Oct. 2017 |
| 129 |
Seunghyun Kim, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Seongjae Cho, and Byung-Gook Park |
Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
5 |
584-590 |
Oct. 2017 |
| 128 |
Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, and Byung-Gook Park |
Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes |
Journal of Nanoscience and Nanotechnology |
17 |
10 |
7160-7163 |
Oct. 2017 |
| 127 |
Eunseon Yu, Seongjae Cho, and Byung-Gook Park |
An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures |
Physica B: Condensed Matter |
521 |
|
305-311 |
Sep. 2017 |
| 126 |
Yongbeom Cho, Eunseon Yu, and Seongjae Cho |
Design of a High-Hole-Mobility Ge Transistor for Si-Driven Heterogeneous Integrated Circuits |
IDEC Journal of Integrated Circuits and Systems |
3 |
3 |
13-19 |
Jul. 2017 |
| 125 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, and Byung-Gook Park |
Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory |
Solid-State Electronics |
132 |
|
109-114 |
Jun. 2017 |
| 124 |
Seunghyun Kim, Dae Woong Kwon, Sang-Ho Lee, Sang-Ku Park, Youngmin Kim, Hyungmin Kim, Young Goan Kim, Seongjae Cho, and Byung-Gook Park |
Characterization of the Vertical Position of the Trapped Charge in Charge-Trap Flash Memory |
Journal of Semiconductor Technology and Science |
17 |
2 |
167-172 |
Apr. 2017 |
| 123 |
Youngmin Kim, Eunseon Yu, Junsoo Lee, and Seongjae Cho |
Nonvolatile Memory Materials/Devices Technologies |
Bulletin of the Korean Institute of Electrical and Electronic Material Engineers |
30 |
3 |
31-43 |
Mar. 2017 |
| 122 |
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park |
Nano-cone resistive memory for ultralow power operation |
Nanotechnology |
28 |
12 |
125207-1-125207-7 |
Mar. 2017 |
| 121 |
Sungjoon Kim, Seongjae Cho, Jaedeok Jeong, Sungjun Kim, Sungmin Hwang, Garam Kim, Sukho Yoon, and Byung-Gook Park |
InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation |
Optics Express |
25 |
6 |
6440-6449 |
Mar. 2017 |
| 120 |
Seunghyun Kim, Sang-Ho Lee, Young-Goan Kim, Seongjae Cho, and Byung-Gook Park |
Highly compact and accurate circuit-level macro modeling of gate-all-around charge-trap flash memory |
Japanese Journal of Applied Physics |
56 |
1 |
014302-1-014302-5 |
Jan. 2017 |
| 119 |
Junsoo Lee, Youngmin Kim, and Seongjae Cho |
Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes |
IEEE Transactions on Electron Devices |
63 |
12 |
4610-4616 |
Dec. 2016 |
| 118 |
Youngmin Kim, Junsoo Lee, and Seongjae Cho |
Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-Effect Transistor |
Journal of Semiconductor Technology and Science |
16 |
6 |
847-853 |
Dec. 2016 |
| 117 |
Jeongmin Lee, Il Hwan Cho, Dongsun Seo, Seongjae Cho, and Byung-Gook Park |
Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy |
Journal of Semiconductor Technology and Science |
16 |
6 |
854-859 |
Dec. 2016 |
| 116 |
Eunseon Yu and Seongjae Cho |
Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel |
Japanese Journal of Applied Physics |
55 |
11 |
114001-1-114001-8 |
Nov. 2016 |
Ewha Womans University