| 267 |
Dong Chang Han, Deok Jin Jang, Seongae Cho, and Il Hwan Cho |
Investigation of modified 1T-DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
205-206 |
Busan, Korea |
Jul. 1-3, 2019 |
| 266 |
Yung Hun Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Physical and Analytical Modeling of Si/SiGe Heterojunction Capacitor |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
195-196 |
Busan, Korea |
Jul. 1-3, 2019 |
| 265 |
Seoyeon Go, Jae Yoon Lee, and Seongjae Cho |
Optimal Design of Si/SiGe Heterojunction Sandwich Tunnel Barrier Field-Effect Transistor Capable of Discriminating the Tunneling and Drift Paths |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
189-190 |
Busan, Korea |
Jul. 1-3, 2019 |
| 264 |
Deok Jin Jang, Dong Chang Han, Seongjae Cho, and Il Hwan Cho |
Improvement of Reliability Characteristics of 1T-DRAM with Positive Feedback Field Effect Transistor |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
179-180 |
Busan, Korea |
Jul. 1-3, 2019 |
| 263 |
Myeongseon Kim, Jongmin Ha, Seongjae Cho, and Il Hwan Cho |
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature Applications |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
158-159 |
Busan, Koea |
Jul. 1-3, 2019 |
| 262 |
Jae Yoon Lee, Min-Hwi Kim, Youngmin Kim, Seoyeon Go, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
A Realistic Modeling of ReRAM Array and Analysis on RC Delay Effects |
2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
144-145 |
Busan, Korea |
Jul. 1-3, 2019 |
| 261 |
Seoyeon Go and Seongjae Cho |
Optimal Design of Sandwich Tunnel Barrier Field-Effect Transistor for Effective Suppression of Ambipolar Current |
2019 IEIE Summer Conference |
135 |
Jeju, Korea |
Jun. 26-28, 2019 |
| 260 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Effect of tunneling barrier layer insertion on HfO2-based RRAM |
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) |
1-2 |
Jeju, Korea |
Jun. 23-26, 2019 |
| 259 |
Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Improved Gradual Reset Phenomenon in SiNx-based RRAM by Diode-Connected Structure |
IEEE Silicon Nanoelectronics Workshop (SNW) |
1-2 |
Kyoto, Japan |
Jun. 9-10, 2019 |
| 258 |
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee |
A Novel 1T-DRAM Cell Using Band-to-Band Tunneling (BTBT)-based Programming Principle |
The 26th Korean Conference Semiconductors (KCS) |
700 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 257 |
Yongjin Jeong, Jisun Park, In Man Kang, Seongjae Cho, and Hyungsoon Shin |
Charge based Current-Voltage Model for the SOI-Junctionless FET |
The 26th Korean Conference on Semiconductors (KCS) |
684 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 256 |
Yung Hun Jung, Yun Hyun Cho, Hoon Heo, and Seongjae Cho |
Optimal Design of Si pin Photodetector at 555-nm Visible-Light Wavelength |
The 26th Korean Conference on Semiconductors (KCS) |
654 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 255 |
Dong Chang Han, Seongjae Cho, and Il Hwan Cho |
Investigation of Modified 1T-DRAM with Twin Gate Tunneling Field Effect Transistor for Improved Retention Characteristics |
The 26th Korean Conference on Semiconductors (KCS) |
645 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 254 |
Deok Jin Jang, Seongjae Cho, and Il Hwan Cho |
Improvement of Reliability Characteristics of 1T-DRAM with Positive Feedback Field Effect Transistor |
The 26th Korean Conference on Semiconductors (KCS) |
642 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 253 |
Jae Yoon Lee, Tae Jung Ha, Soo Gil Kim, and Seongjae Cho |
Control of Overshoot Current in the ReRAM through Circuital Approach |
The 26th Korean Conference on Semiconductors (KCS) |
483 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 252 |
Hyeonjeong Kim, Wookyung Sun, In Man Kang, Seongjae Cho, and Hyungsoon Shin |
Performance Comparison between Conventional and Junctionless Transistors as 1T-DRAM Cell with Poly-Silicon Body |
The 26th Korean Conference on Semiconductors (KCS) |
276 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 251 |
Eunseon Yu, Jae Hwa Seo, Baegmo Son, Sangjoon Park, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Design and Fabrication of Multi-Channel Nanowire SiGe MOSFET |
The 26th Korean Conference on Semiconductors (KCS) |
81 |
Gangwon-do, Korea |
Feb. 13-15, 2019 |
| 250 |
Yung Hun Jung, Seongjae Cho, Hoon Heo, and Yun Hyun Cho |
A 30-GHz ladder-arrayed Si pin photodetector for environmental light communication |
International Conference on Electronics, Information and Communication (ICEIC) 2019 |
638-639 |
Auckland, New Zealand |
Jan. 22-25, 2019 |
| 249 |
Jae Yoon Lee and Seongjae Cho |
Design of SiC 1T DRAM Having a Quantum Well Structure |
2018 IEIE Fall Conference |
81 |
Incheon, Korea |
Nov. 23-24, 2018 |
| 248 |
Seoyeon Go, Jae Yoon Lee, Keun Heo, Jin-Hong Park, and Seongae Cho |
Multi-level memory device based on silicon CMOS processing |
2018 IEIE Fall Conference |
79 |
Incheon, Korea |
Nov. 23-24, 2018 |
Ewha Womans University