238 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime through Its Small-Signal Equivalent Circuit |
Progress In Electromagnetics Research Symposium (PIERS) 2018 |
171 |
Toyama, Japan |
Aug. 1-4, 2018 |
237 |
Yongbeom Cho and Seongjae Cho |
Semi-Floating-Gated Charge-Trap Synaptic Device for Artificial Spike Neural Network |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
400-402 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
236 |
Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho |
Investigation and optimization of double gate MPI 1T-DRAM structure with gate induced drain leakage operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
229-231 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
235 |
Daewoong Kwon, Jae Yoon Lee, and Seongjae Cho |
A Vertical 1T DRAM with Source-Sharing Storage Pocket for Low-Power Operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
223-225 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
234 |
Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho, and In Man Kang |
Polycrystalline Silicon MOSFET-based Capacitorless One-Transistor Dynamic Random-Access Memory with Asymmetric Double-gate Structure |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
211-213 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
233 |
Eunseon Yu and Seongjae Cho |
A more energy-efficient and highly retaining 1T DRAM with SiGe quantum well |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
205-207 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
232 |
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Reliability Prediction of a Wedge Structured CBRAM through Kinetic Monte Carlo Simulation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
156-159 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
231 |
Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Sungmin Hwang, Tejin Jang, Junil Lee, Sungmin Hwang, Seongjae Cho, and Byung-Gook Park |
Fabrication of dual gate positive feedback field effect transistor co-integrated with CMOS |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
125-126 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
230 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Modeling the Voltage-Dependent Resistance Change Behavior of SiNx-Based Resistive Switching Memories |
2018 IEIE Summer Conference |
269-270 |
Jeju, Korea |
Jun. 27-29, 2018 |
229 |
Seoyeon Go, Jae Yoon Lee, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and characterization of Ni/GeOx/p+ Si ReRAM and development of its compact DC model with higher degree of model matching |
2018 IEIE Summer Conference |
215-218 |
Jeju, Korea |
Jun. 27-29, 2018 |
228 |
Haechang Lee, Yongbeom Cho, Yung Hun Jung, and Seongjae Cho |
Characterization of strained Si1-xGex by first-principle simulation based on modified Becke-Johnson exchange potential model |
2018 IEIE Summer Conference |
84-87 |
Jeju, Korea |
Jun. 27-29, 2018 |
227 |
Jae Yoon Lee, Youngmin Kim, Ikhyeon Kwon, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory |
76th Device Research Conference (DRC) |
153-154 |
Santa Barbara, USA |
Jun. 24-27, 2018 |
226 |
Yongbeom Cho, Eunseon Yu, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Semi-floating-gate (SFG) synaptic transistor capable of short- and long-term memory operations towards the hardware-driven neuromorphic system |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
161-162 |
Honolulu, USA |
Jun. 17-18, 2018 |
225 |
Jae Yoon Lee, Min Hwi Kim, Yeon-Joon Choi, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
Compact modeling of fully Si-compatible forming-free Ni/GeOx/p+ Si resistive-switching random-access memory (ReRAM) |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
55-56 |
Honolulu, USA |
Jun. 17-18, 2018 |
224 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Improvement of HfO2-based ReRAMs Nonlinearity and Reset Current Level by Tunneling Barrier Layer Thickness Modulation |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
53-54 |
Honolulu, USA |
Jun. 17-18, 2018 |
223 |
Eunseon Yu, Won-Jun Lee, Jongwan Jung, and Seongjae Cho |
Si Fin/Si1-xGex Shell Channel p-Type FinFET for Sub-10-nm Technology Nodes and Its High-Speed Operation |
The 25th Korean Conference on Semiconductors (KCS) |
515 |
Gangwon, Korea |
Feb. 5-7, 2018 |
222 |
Yung Hun Jung, In Man Kang, Wookyung Sun, Hyungsoon Shin, and Seongjae Cho |
Tunneling Field-Effect Transistor Having SiGe Source Junction and Its Small-Signal Equivalent Circuit Verification through Y-Parameter Analysis |
The 25th Korean Conference on Semiconductors (KCS) |
403 |
Gangwon, Korea |
Feb. 5-7, 2018 |
221 |
Yeon-Joon Choi, Sungjun Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Close Investigation of Electric Field Concentration Effect in the Wedge Structure through Numerical Analysis for Nanoscale ReRAM Application |
The 25th Korean Conference on Semiconductors (KCS) |
273 |
Gangwon, Korea |
Feb. 5-7, 2018 |
220 |
Eunseon Yu and Seongjae Cho |
Inverted-T FinFET for High-Performance Logic and Its Optimal Design |
The 25th Korean Conference on Semiconductors (KCS) |
240 |
Gangwon, Korea |
Feb. 5-7, 2018 |
219 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Seongjae Cho, and Byung-Gook Park |
Neuromorphic Behaviors of HfO2 ReRAM by Pulse Frequency Modulation |
The 25th Korean Conference on Semiconductors (KCS) |
35 |
Gangwon, Korea |
Feb. 5-7, 2018 |