| 243 |
Yung Hun Jung, Jae Yoon Lee, Yongbeom Cho, Seongjae Cho, Hoon Heo, and Yun Hyun Cho |
Light Disturbance in Photodetector Simulation for Vehicle-to-Vehicle Visible Light Communication |
Asia Communications and Photonics Conference (ACP) 2018 |
Su2A.256 |
Hangzhou, China |
Oct. 26-29, 2018 |
| 242 |
Eunseon Yu and Seongjae Cho |
A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement |
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
255-257 |
Austin, USA |
Sep. 24-26, 2018 |
| 241 |
Eunseon Yu, Wookyung Sun, Jae Hwa Seo, In Man Kang, Hyungsoon Shin, and Seongjae Cho |
A Synaptic Transistor Featuring SiGe Quantum Well and Charge-Trap Layer for Short- and Long-Term Potentiation towards Neuromorphic System Application |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
841-842 |
Tokyo, Japan |
Sep. 9-13, 2018 |
| 240 |
Yongbeom Cho, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Semi-Floating-Gate Synaptic Transistor (SFGST) and Its Array Architecture for Hardware-Driven Artificial Spike Neural Network (SNN) |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
615-616 |
Tokyo, Japan |
Sep. 9-13, 2018 |
| 239 |
Jae Yoon Lee, Jongmin Ha, Il Hwan Cho, and Seongjae Cho |
Vertical Double-Gate 1T DRAM with an Asymmetric Oxide Barrier for Significant Enhancement of Data Retention |
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials (SSDM) |
151-152 |
Tokyo, Japan |
Sep. 9-13, 2018 |
| 238 |
Yung Hun Jung, In Man Kang, and Seongjae Cho |
Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime through Its Small-Signal Equivalent Circuit |
Progress In Electromagnetics Research Symposium (PIERS) 2018 |
171 |
Toyama, Japan |
Aug. 1-4, 2018 |
| 237 |
Yongbeom Cho and Seongjae Cho |
Semi-Floating-Gated Charge-Trap Synaptic Device for Artificial Spike Neural Network |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
400-402 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 236 |
Jongmin Ha, Jae Yoon Lee, Myeongseon Kim, Seongjae Cho, and Il Hwan Cho |
Investigation and optimization of double gate MPI 1T-DRAM structure with gate induced drain leakage operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
229-231 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 235 |
Daewoong Kwon, Jae Yoon Lee, and Seongjae Cho |
A Vertical 1T DRAM with Source-Sharing Storage Pocket for Low-Power Operation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
223-225 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 234 |
Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho, and In Man Kang |
Polycrystalline Silicon MOSFET-based Capacitorless One-Transistor Dynamic Random-Access Memory with Asymmetric Double-gate Structure |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
211-213 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 233 |
Eunseon Yu and Seongjae Cho |
A more energy-efficient and highly retaining 1T DRAM with SiGe quantum well |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
205-207 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 232 |
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Reliability Prediction of a Wedge Structured CBRAM through Kinetic Monte Carlo Simulation |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
156-159 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 231 |
Min-Woo Kwon, Kyungchul Park, Myung-Hyun Baek, Sungmin Hwang, Tejin Jang, Junil Lee, Sungmin Hwang, Seongjae Cho, and Byung-Gook Park |
Fabrication of dual gate positive feedback field effect transistor co-integrated with CMOS |
2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) |
125-126 |
Kitakyushu, Japan |
Jul. 2-4, 2018 |
| 230 |
Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, and Byung-Gook Park |
Modeling the Voltage-Dependent Resistance Change Behavior of SiNx-Based Resistive Switching Memories |
2018 IEIE Summer Conference |
269-270 |
Jeju, Korea |
Jun. 27-29, 2018 |
| 229 |
Seoyeon Go, Jae Yoon Lee, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and characterization of Ni/GeOx/p+ Si ReRAM and development of its compact DC model with higher degree of model matching |
2018 IEIE Summer Conference |
215-218 |
Jeju, Korea |
Jun. 27-29, 2018 |
| 228 |
Haechang Lee, Yongbeom Cho, Yung Hun Jung, and Seongjae Cho |
Characterization of strained Si1-xGex by first-principle simulation based on modified Becke-Johnson exchange potential model |
2018 IEIE Summer Conference |
84-87 |
Jeju, Korea |
Jun. 27-29, 2018 |
| 227 |
Jae Yoon Lee, Youngmin Kim, Ikhyeon Kwon, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, and Seongjae Cho |
Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOx Resistive Switching Random-Access Memory |
76th Device Research Conference (DRC) |
153-154 |
Santa Barbara, USA |
Jun. 24-27, 2018 |
| 226 |
Yongbeom Cho, Eunseon Yu, Myung-Hyun Baek, Seongjae Cho, and Byung-Gook Park |
Semi-floating-gate (SFG) synaptic transistor capable of short- and long-term memory operations towards the hardware-driven neuromorphic system |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
161-162 |
Honolulu, USA |
Jun. 17-18, 2018 |
| 225 |
Jae Yoon Lee, Min Hwi Kim, Yeon-Joon Choi, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho, and Byung-Gook Park |
Compact modeling of fully Si-compatible forming-free Ni/GeOx/p+ Si resistive-switching random-access memory (ReRAM) |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
55-56 |
Honolulu, USA |
Jun. 17-18, 2018 |
| 224 |
Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, and Byung-Gook Park |
Improvement of HfO2-based ReRAMs Nonlinearity and Reset Current Level by Tunneling Barrier Layer Thickness Modulation |
2018 IEEE Silicon Nanoelectronics Workshop (SNW) |
53-54 |
Honolulu, USA |
Jun. 17-18, 2018 |
Ewha Womans University