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Title
38

Seongjae Cho and Hyun Woo Kim, "Highly-Scalable 2T Memory Cell and Method of Manufacturing the Same,"

● Korean patent filed, 10-2024-0192933, Dec. 20, 2024. 
37

Min Woo Kwon and Seongjae Cho, "Semiconductor Memory Device,"

● Korean patent filed, 10-2024-0181817, Dec. 9, 2024. 
36

Seongjae Cho and Soomin Kim, "Method of Operating NAND Flash Type Semiconductor Device and NAND Flash Type Semiconductor Device Adopting the Same,"

● Korean patent filed, 10-2024-0143227, Oct. 18, 2024. 
35

Sungjun Kim, Su Baek Lee, Seongjae Cho, "Metal Oxide Film-Based Memory Device and Manufacturing Method Thereof,"

● Korean patent filed, 10-2024-0073327, Jun. 4, 2024.
34

Seongjae Cho and Myounggon Kang, "Integrated Storage-Computation Semiconductor Device for Processing-in-Memory,"

● Korean patent filed, 10-2024-0065990, May 21, 2024. 
33

Seongjae Cho and Jae Yoon Lee, "Resistive Memory Device and Method of Fabricating the Same,"

● Korean patent filed, 10-2024-0041199, Mar. 26, 2024.
32

Min Woo Kwon and Seongjae Cho, "2T DRAM Array for Processing-in-Memory and Logic Operation Method Using the Same,"

● Korean patent filed, 10-2024-0012196, Jan. 26, 2024.
31

Seongjae Cho and Seungjo Baek, "Two-Transistor Memory Cell, Synapse Cell and Neuron Mimic Cell Using the Same and Operation Methods Thereof,"

● Korean patent filed, 10-2021-0150751, Nov. 4, 2021. 
30

Seongjae Cho and Yung Hun Jung, "Si Distributed Bragg Reflector and Fabrication Method Thereof,"

● Korean patent filed, 10-2020-0025551, Feb. 28, 2020.

● Korean patent registered, 10-2430331, Aug. 3, 2022. 
29

Seongjae Cho and Eunseon Yu, "Fabrication Method of Semiconductor Device Having SiGe Shell Channel and Semiconductor Device Fabricated by the Same,"

● Korean patent filed, 10-2019-0133195, Oct. 24, 2019.

● Korean patent registered, 10-2235782, Mar. 29, 2021.

● United States patent filed, 16/698,927, Nov. 27, 2019.

● United States patent registered, US 10,991,813 B1, Apr. 27, 2021.
28

Seongjae Cho, "Feedback 1T DRAM Device Having Localized Partial Insulating Layers,"

● Korean patent filed, 10-2019-0105435, Aug. 27, 2019.

● Korean patent registered, 10-2202910, Jan. 8, 2021.

● United States patent filed, 16/726,506, Dec. 24, 2019.

● United States patent registered, US 11,296,086 B2, Apr. 5, 2022.
27

Jin-Hong Park, Keun Heo, Seongjae Cho, and Sungjoo Lee, "Synapse device and method of fabricating thereof,"

● Korean patent filed, 10-2019-0055291, May 10, 2019.

● Korean patent registered, 10-2211320, Jan. 28. 2021.
26

Seongjae Cho and Yung Hun Jung, "Photodiode Having Semi-Cylindrical Light Absorption Layer and Fabricating Method of the Same,"

● Korean patent filed, 10-2019-0007104, Jan. 18, 2019.

● Korean patent registered, 10-2330769, Nov. 19, 2021.
25

Seongjae Cho and Jae Yoon Lee, "Resistive memory device and method of fabricating the same,"

● Korean patent filed, 10-2018-0158703, Dec. 10, 2018.
24

Seongjae Cho, Eunseon Yu, and Jae Yoon Lee, "One-Transistor DRAM Cell Device Having Quantum Well Structure,"

● Korean patent filed, 10-2018-0127746, Oct. 24, 2018.

● Korean patent registered, 10-2059896, Dec. 20, 2019.

● United States patent filed, 16/660,203, Oct. 22, 2019.  

● United States patent registered, US 11,158,732 B2, Oct. 26, 2021.
23

Seongjae Cho and Eunseon Yu, "Intelligent Semiconductor Device Having SiGe Quantum Well,"

● Korean patent filed, 10-2018-0108761, Sep. 12, 2018.

● Korean patent registered, 10-2051308, Nov. 27, 2019.

● United States patent filed, 16/451,639, Jun. 25, 2019.

● United States patent registered, US 10,790,359 B2, Sep. 29, 2020.
22

Seongjae Cho, Jin Hong Park, Keun Heo, and Jae Yoon Lee, "Multi-Level CMOS Random-Access Memory Having 2-Transistor 1-Capacitor Structure and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0068304, Jun. 14. 2018.

● Korean patent registered, 10-2112013, May 12, 2020.

21

Seongjae Cho and Hyungsoon Shin, "One-Transistor DRAM Cell Device Based on Polycrystalline Silicon with FinFET Structure and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0024449, Feb. 28, 2018.

● Korean patent registered, 10-2051306, Nov. 27, 2019.

● United States patent filed, 16/127,442, Sep. 11, 2018.

● United States patent registered, US 10,714,479, Jul. 14, 2020.
20

Seongjae Cho and Hyungsoon Shin, "One-Transistor DRAM Cell Device Based on Polycrystalline Silicon and Fabrication Method Thereof,"

● Korean patent filed, 10-2018-0019936, Feb. 20, 2018.

● Korean patent registered, 10-2051304, Nov. 27, 2019.
19

Seongjae Cho and Yongbeom Cho, "Synaptic Semiconductor Device and Neural Networks Using the Same,"

● Korean patent filed, 10-2017-0152803, Nov. 16, 2017.

● Korean patent registered, 10-1958769, Mar. 11, 2019.

● United States patent filed, 15/892,658, Feb. 9, 2018.

● United States patent registered, US 10,651,316, May 12, 2020.
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