| 389 |
Yeji Lee and Seongjae Cho |
Resistive-Switching Random-Access Memory with a Minimal Thermal Budget Embedding Si3N4 Switching and Al2O3 Tunneling Layers of Neuromorphic Computing |
2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD) |
P41 |
Nara, Japan |
Jul. 3-4, 2025 |
| 388 |
Soomin Kim, So Won Son, Soo Jin Kim, Dajin Kim, Seung Jae Baik, and Seongjae Cho |
Investigation into Memory Operations of IGZO-Channel NAND Flash Cell Depending on Device Scaling through Parameter Validations by TCAD Simulation |
2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD) |
P16 |
Nara, Japan |
Jul. 3-4, 2025 |
| 387 |
Yi Yu, Erica Soomin Kim, Sowon Son, Donguk Nam, and Seongjae Cho |
Effects of SiGe Buffer Layer and Post-Annealing Processing on Photoluminescence of Ge/Si Heterostructures for Light Source Application in Optical Interconnect |
2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD) |
O15 |
Nara, Japan |
Jul. 3-4, 2025 |
| 386 |
Xuncheng Shi, So Won Son, Erica Soomin Kim, Donguk Nam, and Seongjae Cho |
Enhancement of Photoluminescence of Ge by Multiple-Quantum-Well Structuring for Group-IV Light Source in Si Optical Interconnect |
2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD) |
O3 |
Nara, Japan |
Jul. 3-4, 2025 |
| 385 |
Euni Ko and Seongjae Cho |
Raman Analysis of Ni0.5Cu0.5Te2 Thin-Films in the A-Few-Layered Structure Prepared by Exfoliation for Thermoelectric Device Applications |
2025 IEIE Summer Conference |
4812-4815 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 384 |
Yesuh Kim and Seongjae Cho |
A More Accurate Modeling of Intrinsic Carrier Concentration of Si with Material Parameters Considering Their Temperature Dependences |
2025 IEIE Summer Conference |
1552-1555 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 383 |
Yeji Lee and Seongjae Cho |
Analyses on Synaptic Behaviors and Applicability in Processing-in-Memory of Ni/Si3N4/p+ poly-Si ReRAM Device Based on Low-Temperature Processing below 350 ℃ |
2025 IEIE Summer Conference |
1399-1401 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 382 |
Myungha Shin, Soomin Kim, and Seongjae Cho |
Design of MOSFET with Metal Drain Junction and Analysis on Its Switching Characteristics Depending on Channel Doping Concentration |
2025 IEIE Summer Conference |
1342-1345 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 381 |
So Won Son, Soomin Kim, Yeji Lee, Soo Jin Kim, Dajin Kim, Seung Jae Baik, and Seongjae Cho |
Analysis on Short-Channel Effects in IGZO-Channel MOSFET for Device Applications under Sub-100-nm Scaling Condition |
2025 IEIE Summer Conference |
1066-1067 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 380 |
Erica Soomin Kim and Seongjae Cho |
Evaluation of Applicability of Dynamic-Threshold MOSFET for Bulk 28-nm Technology through TCAD Simulation |
2025 IEIE Summer Conference |
915-917 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 379 |
Soomin Kim, Yeji Lee, Chan-Gi Yook, Wonbo Shim, and Seongjae Cho |
Fabrication, Characterization, and Assessment for Applications in Artificial Intelligence of Vertically-Layered Ultra-Thin-Channel 2T DRAM Featuring 30-nm Gate-Length Inference Transistor |
2025 IEIE Summer Conference |
3-7 |
Jeju, Korea |
Jun. 24-27, 2025 |
| 378 |
Yeji Lee, Sunghyun Woo, Sungjun Kim, Myounggon Kang, and Seongjae Cho |
Dual-Layer Dielectric Stack for Extremely Low-Power and Superbly State-Distinctive Operations of Si-Compatible Memristor |
The 32nd Korean Conference on Semiconductors (KCS) |
1297 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 377 |
Dayeon Kong and Seongjae Cho |
An Accurate Modeling of Fermi Potential over Wider Range of Temperature for Future Device Applications |
The 32nd Korean Conference on Semiconductors (KCS) |
1292 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 376 |
Soomin Kim, Yeji Lee, and Seongjae Cho |
Sub-100-nm Nanohole Formation Technique by Double-Poly-Si Inner-Sidewall Spacer Patterning at Quarter-Micron Lithography |
The 32nd Korean Conference on Semiconductors (KCS) |
1288 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 375 |
Jaeung Ryu, Jueun Kim, Minjae Kim, Minju Hwang, Seongjae Cho, and Il Hwan Cho |
Investigation of Two-Terminal Thyristor Random-Access Memory with an Additional Localized Lightly-Doped Base for Improved Retention |
The 32nd Korean Conference on Semiconductors (KCS) |
540 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 374 |
Yeji Lim and Seongjae Cho |
Improvement of Current Drivability through Current Limiter towards Bulk DTMOS with Low-Power High-Performance Operation Versatility |
The 32nd Korean Conference on Semiconductors (KCS) |
382 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 373 |
Erica Soomin Kim, So Won Son, Yeji Lee, and Seongjae Cho |
Analysis on Effects of Ge Content on Intermodal Dispersion in Si1-xGex Waveguide for Ultrahigh-Speed Integrated Optical Interconnect |
The 32nd Korean Conference on Semiconductors (KCS) |
131 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 372 |
So Won Son, Erica Soomin Kim, and Seongjae Cho |
Investigation of Crystallinity and Optical Properties of Ge on Si Prepared by DC and RF Sputtering in Comparison |
The 32nd Korean Conference on Semiconductors (KCS) |
130 |
Jeongsun, Korea |
Feb. 12-14, 2025 |
| 371 |
김수민 에리카, 손소원, 조성재 |
Investigation into the Effects of the Metal Workfunction on Current Switching Characteristics in Metal-Junction Field-Effect Transistor |
제7회 반도체공학회 동계종합학술대회 논문집 |
44 |
Buyeo, Korea |
Jan. 12-14, 2025 |
| 370 |
손소원, 김수민 에리카, 조성재 |
Design Consideration in Ultra-fast SiGe Passive Devices for On-chip Optical Interconnect Devices |
제7회 반도체공학회 동계종합학술대회 논문집 |
43 |
Buyeo, Korea |
Jan. 12-14, 2025 |
Ewha Womans University