| 229 |
Yun-Jae Oh, Yunejae Suh, So Won Son, Seongjae Cho, Daewoong Kang, and Il Hwan Cho |
A Novel Self-Aligned Processing for Doubling the Integration Density of 3D NAND Flash Memory |
Journal of Semiconductor Technology and Science |
|
|
|
Accepted and in press |
| 228 |
Hyun-Seo Oh, Yun-Jae Oh, Hyeongjun So, Jueun Kim, Soomin Kim, So Won Son, Tae Hun Kim, Daewoong Kang, Seongjae Cho, and Il Hwan Cho |
Investigation of the Memory Operations in the 3D NAND Flash with More Realistic Geometry with Wavey Channel in the Tapered Channel Hole |
Journal of Electrical Engineering & Technology |
|
|
|
Accepted and in press |
| 227 |
Soomin Kim, Md. Hasan Raza Ansari, and Seongjae Cho |
Material-Device Simulations of High-Frequency Performance of n-type MOSFET with GeSn Channel |
Journal of Semiconductor Technology and Science |
|
|
|
Accepted and in press |
| 226 |
Yeji Lee, Arati Kumari Shah, Myounggon Kang, and Seongjae Cho |
Hardware Implementation of Integration-and-Fire Neuron Circuit on FPGA and Performance Evaluation for Applications in Spiking Neural Network |
Journal of Semiconductor Technology and Science |
|
|
|
Accepted and in press |
| 225 |
Min-Kyu Park, Joon Hwang, Soomin Kim, Wonjun Shin, Wonbo Shim, Jong-Ho Bae, Jong-Ho Lee, and Seongjae Cho |
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computing |
Scientific Reports |
14 |
|
29089-1-29089-14 |
Nov. 2024 |
| 224 |
Junwon Jang, Seongmin Kim, Suyong Park, Soomin Kim, Sungjun Kim, and Seongjae Cho |
Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium-Gallium-Zinc-Oxide Films for Reservoir Computing |
ACS Applied Nano Materials |
7 |
19 |
22430-22435 |
Oct. 2024 |
| 223 |
Soomin Kim and Seongjae Cho |
Vertical Double-Gate SiC/Si/SiC Quantum-Well 1T DRAM and Its High-Temperature Performances |
Journal of Semiconductor Technology and Science |
24 |
5 |
483-490 |
Oct. 2024 |
| 222 |
Junwon Jang, Jungwoo Lee, Jong-Ho Bae, Seongjae Cho, and Sungjun Kim |
InGaZnO-based synaptic transistor with embedded ZnO charge-trapping layer for reservoir computing |
Sensors and Actuators A: Physical |
373 |
|
115405-1-115405-9 |
Aug. 2024 |
| 221 |
Dongyeol Ju, Jungwoo Lee, Sungjun Kim, and Seongjae Cho |
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing |
The Journal of Chemical Physics |
161 |
1 |
014709-1-014709-10 |
Jul. 2024 |
| 220 |
Hansa Mahajan, Arati Shah, Soomin Kim, and Seongjae Cho |
FeNP@MIL-101(Fe)-based carbon nanotube composite for energy storage applications |
ACS Omega |
9 |
23 |
24546-24557 |
Jun. 2024 |
| 219 |
Soomin Kim and Seongjae Cho |
Analysis on Performances of Ultra-Thin Vertical MOSFET Depending on Position of Gate-Drain Misalignment |
Japanese Journal of Applied Physics |
63 |
5 |
054002-1-054002-6 |
May 2024 |
| 218 |
Seongjae Cho, Sung-Tae Lee, Soomin Kim, and Hyungcheol Shin |
A More Practical Indicator of MAC Operational Power Efficiency inside Memory-Based Synapse Array |
Journal of Semiconductor Technology and Science |
24 |
1 |
47-54 |
Feb. 2024 |
| 217 |
Arati Kumari Shah, Kannan Udaya Mohanan, Jisun Park, Hyungsoon Shin, Euo-Sik Cho, and Seongjae Cho |
An Area-Efficient Integrate-and-Fire Neuron Circuit with Enhanced Robustness against Synapse Variability in Hardware Neural Network |
IET Circuits, Devices & Systems |
2023 |
|
1052063-1-1052063-10 |
Dec. 2023 |
| 216 |
Chandreswar Mahata, Hyojin So, Soomin Kim, Sungjun Kim, and Seongjae Cho |
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies |
Materials |
16 |
24 |
7510-1-7510-12 |
Dec. 2023 |
| 215 |
Saurabh Suredra Joshi, Soomin Kim, Chang-Hyun Kim, and Seongjae Cho |
Compact Modeling of a HfO2 Memristor Cell with Dependence on Compliance Current for Large-Area Simulations |
Journal of Semiconductor Technology and Science |
23 |
6 |
382-388 |
Dec. 2023 |
| 214 |
Chandreswar Mahata, Hyojin So, Seyeong Yang, Muhammad Ismail, Sungjun Kim, and Seongjae Cho |
Uniform multilevel switching and synaptic properties in RF sputtered InGaZnO based memristor treated with oxygen plasma |
The Journal of Chemical Physics |
159 |
|
184712-1-184712-9 |
Nov. 2023 |
| 213 |
Minseo Noh, Dongyeol Ju, Seongjae Cho, and Sungjun Kim |
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device |
Nanomaterials |
13 |
|
2856-1-2856-12 |
Oct. 2023 |
| 212 |
Chaewon Yun, Sangwan Kim, Seongjae Cho, Il Hwan Cho, Hyun Woo Kim, Jang Hyun Kim, and Garam Kim |
Optimization of Dual-Workfunction Line Tunnel Field-Effect Transistor with Island Source Junction |
Journal of Semiconductor Technology and Science |
23 |
4 |
207-214 |
Aug. 2023 |
| 211 |
Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, and Seongjae Cho |
Synaptic Plasticity and Non-Volatile Memory Characteristics in TiN-Nanocrystals-Embedded 3D Vertical Memristor-Based Synapse for Neuromorphic System |
Nanoscale |
15 |
|
13239-13251 |
Jul. 2023 |
| 210 |
Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, and Seongjae Cho |
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System |
Advanced Materials Interfaces |
10 |
21 |
2300290-1-2300290-10 |
Jun. 2023 |
Ewha Womans University